RECRYSTALLIZATION OF CAST POLYCRYSTALLINE SILICON

被引：6

作者：

KINOSHITA, M ^{[1
]}

CHAMPIER, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER MET & IND MINES,CNRS,PHYS SOLIDE LAB 155,F-54042 NANCY,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING | 1981年 / 47卷 / 01期

关键词：

D O I：

10.1016/0025-5416(81)90037-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：29 / 35

页数：7

共 9 条

[1]

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[2]

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[3] GRAIN-GROWTH IN POLYCRYSTALLINE SILICON [J].

JAIN, GC ;

DAS, BK ;

BHATTACHERJEE, SP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :445-446

[4]

KONOSHITA M, 1979, SCR METALL, V13, P863

[5]

LALL C, UNPUBLISHED

[6] DEFORMATION AND RECRYSTALLIZATION TEXTURES IN COMPRESSED POLYCRYSTALLINE SILICON [J].

PRATT, B ;

KULKARNI, S ;

POPE, DP ;

GRAHAM, CD ;

NOEL, G .

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1977, 8 (11) :1799-1804

[7]

SCHINS WJH, 1978, 1ST P EUR COMM C PHO

[8] ORIENTATION ANALYSIS OF POLYCRYSTALLINE SILICON [J].

SCHMIDT, C .

MATERIALS RESEARCH BULLETIN, 1978, 13 (09) :873-876

[9] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J].

WADA, Y ;

NISHIMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1499-1504

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