INDUCTION-MODEL ANALYSIS OF SI-H STRETCHING MODE IN POROUS SILICON

被引：39

作者：

BORGHESI, A

GUIZZETTI, G

SASSELLA, A

BISI, O

PAVESI, L

机构：

[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,I-27100 PAVIA,ITALY

[2] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 07期

关键词：

D O I：

10.1016/0038-1098(94)90175-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A detailed study of Si-H stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on Si-H stretching was determined.

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收藏

页码：615 / 618

页数：4

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