A HIGH-TEMPERATURE PRECISION AMPLIFIER

被引：23

作者：

FINVERS, IG

HASLETT, JW

TROFIMENKOFF, FN

机构：

[1] Department of Electrical and Computer Engineering, University of Calgary, Calgary. Alberta

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1995年 / 30卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/4.341738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A precision operational amplifier has been developed for instrumentation applications in which the circuitry must operate in ambient temperatures as high as 200-degrees-C. At 200-degrees-C the amplifier maintains an input offset voltage and current of less than 200 muV and 1 nA respectively, a gain bandwidth product of 2.2 MHz, and a slew rate of 5.4 V/muS. The amplifier is fabricated in a standard CMOS process and consumes 5.5 mW of power at a supply voltage of 5 V. A continuous time auto-zeroed amplifier topology is used to achieve the low offset voltage levels. At high temperatures the leakage currents of the sample and hold switches used to achieve auto-zeroing degrade the offset correction voltages stored on the hold capacitors. This degradation is reduced by using large external hold capacitors and by minimizing the diffusion area of the switches through the use of a doughnut shaped layout. The effect of the voltage degradation is reduced by sensing the offset correction voltage with a low sensitivity differential auxiliary input stage. A new input switch topology is used to reduce the amplifier's input offset current at high temperatures.

引用

页码：120 / 128

页数：9

共 21 条

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