ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA

被引：86

作者：

SINHA, AK

SMITH, TE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2756 / 2760

页数：5

共 12 条

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[3]

Hill N.E., 1969, DIELECTRICAL PROPERT, P236

[4]

NICOLLIAN EH, 1974, 12TH ANN P REL PHYS, P267

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ODWYER, JJ .

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[6]

RAND MJ, UNPUBLISHED

[7] MOS (SI-GATE) COMPATIBILITY OF RF DIODE AND TRIODE SPUTTERING PROCESSES [J].

SINHA, AK .

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[8]

SINHA AK, 1976, FAL EL SOC M LAS VEG, V76, P625

[9] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J].

SNOW, EH ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :263-&

[10] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

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