PHASE-FORMATION DIAGRAM FOR PRECURSORS TO EPITAXIAL-GROWTH OF NISI2 ON SI(111)

被引:15
作者
BENNETT, PA
JOHNSON, AP
HALAWITH, BN
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 08期
关键词
D O I
10.1103/PhysRevB.37.4268
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:4268 / 4271
页数:4
相关论文
共 27 条
[1]   EFFECTS OF SURFACE-DEFECTS ON THE ORIENTATION OF NISI2 FORMED ON SI (111) SUBSTRATES [J].
AKINCI, G ;
OHNO, T ;
WILLIAMS, ED .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :754-756
[2]   STACKING-FAULT MODEL FOR THE SI(111)-(7X7) SURFACE [J].
BENNETT, PA ;
FELDMAN, LC ;
KUK, Y ;
MCRAE, EG ;
ROWE, JE .
PHYSICAL REVIEW B, 1983, 28 (06) :3656-3659
[3]   CRYSTALLINE INTERMEDIATE PHASES IN THE FORMATION OF EPITAXIAL NISI2 ON SI(111) [J].
BENNETT, PA ;
HALAWITH, BN ;
JOHNSON, AP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2121-2126
[4]  
BENNETT PA, IN PRESS J VAC SCI T, V15
[5]   STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS [J].
BRUINSMA, R ;
ZANGWILL, A .
JOURNAL DE PHYSIQUE, 1986, 47 (12) :2055-2073
[6]   SURFACE-DIFFUSION OF PD AND AU ON W SINGLE-CRYSTAL PLANES .1. SPREADING BEHAVIOR OF PD AND AU LAYERS [J].
BUTZ, R ;
WAGNER, H .
SURFACE SCIENCE, 1979, 87 (01) :69-84
[7]   ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].
CHERNS, D ;
ANSTIS, GR ;
HUTCHISON, JL ;
SPENCE, JCH .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862
[8]   METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].
CHEUNG, NW ;
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
MAYER, JW ;
ULLRICH, BM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923
[9]   NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].
CHEUNG, NW ;
CULBERTSON, RJ ;
FELDMAN, LC ;
SILVERMAN, PJ ;
WEST, KW ;
MAYER, JW .
PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124
[10]   LEED INVESTIGATIONS ON THE INTERACTION OF PD AND NI WITH DIFFERENT SI(111) SURFACES [J].
CLABES, JG .
SURFACE SCIENCE, 1984, 145 (01) :87-100