EFFECT OF NON-EXPONENTIAL TRANSIENTS ON THE DETERMINATION OF DEEP-TRAP ACTIVATION-ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：24

作者：

WHITE, AM ^{[1
]}

DAY, B ^{[1
]}

GRANT, AJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 22期

关键词：

D O I：

10.1088/0022-3719/12/22/024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The deep-level transient spectroscopy technique is now well established for the characterisation of deep traps in semiconductors. Gross errors may appear in the trap activation energy and capture cross section, however, when non-exponential capacitance transients are present. This paper describes the mechanism which gives rise to this effect and an example of its observation in experimental data. An analysis of the transient shape is found to be necessary if such errors are to be avoided.

引用

页码：4833 / 4838

页数：6