NONVOLATILE MEMORY CHARACTERISTICS OF SUBMICROMETER HALL STRUCTURES FABRICATED IN EPITAXIAL FERROMAGNETIC MNAL FILMS ON GAAS

被引：13

作者：

DEBOECK, J ^{[1
]}

SANDS, T ^{[1
]}

HARBISON, JP ^{[1
]}

SCHERER, A ^{[1
]}

GILCHRIST, H ^{[1
]}

CHEEKS, TL ^{[1
]}

TANAKA, M ^{[1
]}

KERAMIDAS, VG ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

EPITAXY AND EPITAXIAL GROWTH; MEMORIES; THIN-FILM DEVICES; MAGNETIC DEVICES AND MATERIALS;

D O I：

10.1049/el:19930282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hall-effect structures with submicrometre linewidths (< 0.3 mum) have been fabricated in ferromagnetic thin films of Mn0.60Al0.40 which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information.

引用

页码：421 / 423

页数：3

共 11 条

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