PULSE-TIME MODULATED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING FOR HIGHLY SELECTIVE, HIGHLY ANISOTROPIC, AND LESS-CHARGING POLYCRYSTALLINE SILICON PATTERNING

被引：65

作者：

SAMUKAWA, S

TERADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587616

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3300 / 3305

页数：6

共 8 条

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[4] MURAKAWA S, 1993, 15TH P DRY PROC S, P39
[5] EXTREMELY HIGH-SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON
SAMUKAWA, S
SUZUKI, Y
SASAKI, M
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (04) : 403 - 405
[6] OPTIMALLY STABLE ELECTRON-CYCLOTRON RESONANCE PLASMA GENERATION AND ESSENTIAL POINTS FOR COMPACT PLASMA SOURCE
SAMUKAWA, S
NAKAMURA, T
ISHIDA, T
ISHITANI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4348 - 4356
[7] LOW RADIO-FREQUENCY BIASED ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING
SAMUKAWA, S
TOYOSATO, T
WANI, E
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 896 - 898
[8] Samukawa S., 1990, JPN J APPL PHYS, V29, P896