NON-QUASI-STATIC SMALL-SIGNAL MODELS FOR SEMICONDUCTOR JUNCTION DIODES WITH EXTENSIONS FOR TRANSISTORS

被引：11

作者：

CHEN, MK ^{[1
]}

LINDHOLM, FA ^{[1
]}

JUNG, TW ^{[1
]}

机构：

[1] HARRIS CORP, MELBOURNE, FL 32901 USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期

关键词：

D O I：

10.1016/0038-1101(87)90017-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：883 / 885

页数：3

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[8] TRANSPORT IN SEMICONDUCTORS WITH LOW SCATTERING RATE AND AT HIGH-FREQUENCIES [J].

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LINDHOLM, FA .

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[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

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[10]

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