MOBILITY OF POSITRONS IN SILICON

被引：35

作者：

MILLS, AP ^{[1
]}

PFEIFFER, L ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICS LETTERS A | 1977年 / 63卷 / 02期

关键词：

D O I：

10.1016/0375-9601(77)90220-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：118 / 120

页数：3

共 15 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[2] MOBILITY OF POSITRONS IN SEMICONDUCTORS [J].

BERGERSEN, B ;

MCMULLEN, T .

SOLID STATE COMMUNICATIONS, 1971, 9 (21) :1865-+

[3] POSITRON IMPLANTATION-PROFILE EFFECTS IN SOLIDS [J].

BRANDT, W ;

PAULIN, R .

PHYSICAL REVIEW B, 1977, 15 (05) :2511-2518

[4] EFFICIENT POSITRONIUM FORMATION BY SLOW POSITRONS INCIDENT ON SOLID TARGETS [J].

CANTER, KF ;

MILLS, AP ;

BERKO, S .

PHYSICAL REVIEW LETTERS, 1974, 33 (01) :7-10

[5]

COSTELLO DG, 1972, PHYS REV B, V5, P1433

[6] ON THE ANGULAR DISTRIBUTION OF 2-PHOTON ANNIHILATION RADIATION [J].

DEBENEDETTI, S ;

COWAN, CE ;

KONNEKER, WR ;

PRIMAKOFF, H .

PHYSICAL REVIEW, 1950, 77 (02) :205-212

[7]

EVANS RD, 1955, ATOMIC NUCLEUS, P628

[8] THERMALIZATION OF POSITRONS IN METALS [J].

GARWIN, RL .

PHYSICAL REVIEW, 1953, 91 (06) :1571-1572

[9] MEASUREMENT OF MOBILITY OF POSITRONS IN GERMANIUM [J].

MILLS, AP ;

PFEIFFER, L .

PHYSICAL REVIEW LETTERS, 1976, 36 (23) :1389-1393

[10] THERMALIZATION TIME OF HOT PHOTOEXCITED HOLES IN P-TYPE GERMANIUM [J].

NORTON, P ;

LEVINSTEIN, H .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02) :478-+

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