MICROSCOPIC THEORY OF INTERVALLEY SCATTERING IN INP

In analogy to previous work on GaAs, we apply the "rigid-pseudo-ion" model to intervalley-scattering (IVS) processes in InP. We give the IVS times from the GAMMA valley to the side valleys around L and X as a function of energy at 0 and 300 K as well as the return times from the L and X points to the GAMMA valley from 0 to 400 K. Our results suggest that the strength of the electron-phonon interaction in InP is similar to that in GaAs. Therefore the IVS times in InP can be obtained from those of GaAs by a simple extrapolation allowing for the different position of the satellite valleys. Nevertheless, our calculated IVS times are much slower than those found from hot-photoluminescence and photoemission experiments.