RECOMBINATION IN GASB/ALSB MULTIPLE QWS UNDER HIGH-EXCITATION CONDITIONS

被引：2

作者：

FUCHS, G ^{[1
]}

HAUSSER, S ^{[1
]}

HANGLEITER, A ^{[1
]}

GRIFFITHS, G ^{[1
]}

KROEMER, H ^{[1
]}

SUBBANNA, S ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期

关键词：

D O I：

10.1016/0749-6036(91)90342-O

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the recombination dynamics in GaSb AlSb MQW structures under high excitation conditions. Time-resolved measurements were performed using the up-conversion technique. The carrier dynamics in these structures is strongly influenced by the small energetic separation between the Γ-valley and the L-valleys even in the direct material with Lz ≥ 40 Å. At room-temperature we find that the Auger recombination with its coefficient C = 4 · 10-28cm6s-1 is the dominant recombination mechanism at high carrier densities. The Auger coefficient C shows a monotonic increase with temperature up to 400 K in contrast to theory. © 1991.

引用

页码：361 / 364

页数：4

共 19 条

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