FORMATION OF THE FE-STEPPED SI(100) INTERFACE AS STUDIED BY ELECTRON-SPECTROSCOPY

被引：8

作者：

CHERIEF, N ^{[1
]}

VEUILLEN, JY ^{[1
]}

TAN, TAN ^{[1
]}

CINTI, R ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CNRS,CTR RECH MECHANISMES CROISSANCE CRISTALLINE,F-1328 MARSEILLE 09,FRANCE

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93954-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fe thin films have been deposited on stepped Si(100) surfaces under ultra high vacuum (uhv) conditions and investigated by X-ray-induced Auger electron spectroscopy (XAES) and photoelectron spectroscopy (XPS). The results suggest that even at room temperature a slight Si interdiffusion occurs into the Fe layers, giving rise to an intermixed FeSi phase. With increasing coverage (Θ ≥ 15 A ̊) the surface composition becomes Fe richer, and an almost pure Fe film grows on top of the interfacial compound. © 1990.

引用

页码：1350 / 1352

页数：3

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