THERMAL-OXIDATION OF GASB AND STUDY OF OXIDE PROPERTIES

被引：4

作者：

BARMAN, P

BASU, N

BASU, S

机构：

[1] Semicond. Mater. Lab., Indian Inst. of Technol., Kharagpur

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 02期

关键词：

D O I：

10.1088/0268-1242/6/2/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal oxidation of GaSb has been carried out and the oxide characteristics have been studied in detail. XPS analysis reveals that this oxide is composed of both Ga2O3 and Sb2O3. The oxide has high DC resistance and excellent breakdown strength. C-V characteristics of the Al-oxide-GaSb MIS structure are also presented.

引用

页码：129 / 131

页数：3