ION IMPLANTATION AND ANNEALING EFFECTS IN SIO2 LAYERS ON SILICON STUDIED BY OPTICAL MEASUREMENTS

被引：31

作者：

FRITZSCHE, CR

ROTHEMUND, W

机构：

来源：

关键词：

D O I：

10.1149/1.2404451

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1243 / +

页数：1

共 13 条

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[5] FRITZSCHE CR, 1971, RADIAT EFF, V7, P87
[6] FRITZSCHE CR, 1970, P EUROP C ION IMPLAN, P123
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[8] VIBRATION FREQUENCIES AND BINDING FORCES IN SOME SILICATE GROUPS
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[9] RADIATION DAMAGE AND CENON RELEASE IN QUARTZ AND FUSED SILICA FOLLOWING ION BOMBARDMENT
MATZKE, H
[J]. PHYSICA STATUS SOLIDI, 1966, 18 (01): : 285 - &
[10] Mayer J. W., 1970, ION IMPLANTATION SEM