THERMALLY STIMULATED FIELD-EMISSION OF CHARGE FROM TRAPS IN THE TRANSITION LAYER OF SI-SIO2 STRUCTURES

被引：11

作者：

GOMENIUK, YV ^{[1
]}

LITOVSKI, RN ^{[1
]}

LYSENKO, VS ^{[1
]}

OSIYUK, IN ^{[1
]}

TYAGULSKI, IP ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKRAINE,USSR

来源：

APPLIED SURFACE SCIENCE | 1992年 / 55卷 / 2-3期

关键词：

D O I：

10.1016/0169-4332(92)90108-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A method to investigate charge emission from shallow traps at the semiconductor/insulator interface in MIS structures depleted with a linear voltage sweep at low temperatures is presented. The use of this new technique in conjunction with thermally stimulated charge release measurements makes it possible to assess the perfectness of the interface and to determine the activation energies of shallow traps in the transition region of the Si/SiO2 interface.

引用

页码：179 / 185

页数：7

共 5 条

[1]

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[2]

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