SINGLE AND DOUBLE PHOTOIONISATION IN XE AND BA ABOVE THE 4D THRESHOLD

被引：48

作者：

AMUSIA, MY

CHERNYSHEVA, LV

GRIBAKIN, GF

TSEMEKHMAN, KL

机构：

[1] ACAD SCI USSR,INST INFORMAT & AUTOMAT,LENINGRAD,USSR

[2] MI KALININ POLYTECH INST,LENINGRAD 195251,USSR

来源：

JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS | 1990年 / 23卷 / 03期

关键词：

D O I：

10.1088/0953-4075/23/3/010

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The authors advance and examine a new mechanism which strongly influences the photoionisation processes above the 4d threshold in Xe and Ba. It is shown that the elastic and inelastic scattering of the inner-shell photoelectron by the outer-shell electrons determines the rate of single and double ionisation, decomposing the cross section of the inner-shell photoabsorption into these two channels. The results of these calculations are in good agreement with experimental data. © 1990 IOP Publishing Ltd.

引用

页码：393 / 402

页数：10

共 15 条

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