ESR STUDIES ON P+ ION-IMPLANTED SI

被引:9
作者
HASEGAWA, S
KONTANI, R
SHIMIZU, T
机构
关键词
D O I
10.1143/JJAP.10.655
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:655 / &
相关论文
共 8 条
[1]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[2]   ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].
CROWDER, BL ;
TITLE, RS ;
BRODSKY, MH ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&
[3]   ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON [J].
HANEMAN, D .
PHYSICAL REVIEW, 1968, 170 (03) :705-&
[4]   COMPARISON OF THERMAL BEHAVIOR OF VACUUM-CRUSHED AIR-CRUSHED AND MECHANICALLY POLISHED SILICON SURFACES BY ELECTRON PARAMAGNETIC RESONANCE [J].
HANEMAN, D ;
CHUNG, MF ;
TALONI, A .
PHYSICAL REVIEW, 1968, 170 (03) :719-&
[5]  
TOKUYAMA T, PRIVATE COMMUNICATIO
[6]  
TSUCHIMOTO T, 1970, J JAPAN SOC APPL P S, V39, P82
[7]  
TSUCHIMOTO T, 1969, 1 P C SOL STAT DEV T
[8]   PARAMAGNETIC RESONANCE OF DEFECTS INTRODUCED NEAR SURFACE OF SOLIDS BY MECHANICAL DAMAGE [J].
WALTERS, GK ;
ESTLE, TL .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :1854-&