FIELD ENHANCEMENT OF THE PHOTOELECTRIC AND SECONDARY-ELECTRON EMISSION FROM CSI

被引：30

作者：

BUZULUTSKOV, A ^{[1
]}

BRESKIN, A ^{[1
]}

CHECHIK, R ^{[1
]}

机构：

[1] WEIZMANN INST SCI,DEPT PARTICLE PHYS,IL-76100 REHOVOT,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.358791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the electron emission from a CsI-coated multiwire cathode, induced by ultraviolet photons and electrons, in vacuum at high electric fields. We found an enhancement in quantum efficiency of a factor of 1.5 at 160 nm, 3 at 185 nm, and 25 above 200 nm, at a field of 500 kV/cm. At the short wavelengths the amplitude of the effect is a linear function of the square root of the field strength. The enhancement of the electron-induced secondary electron emission yield is dependent on the primary electron energy: for energies above 1 keV it varies by a factor of 2 to 10. A simple model of the field enhancement of the photoemission is suggested. Practical applications are discussed. © 1995 American Institute of Physics.

引用

页码：2138 / 2145

页数：8

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