COMPARISON OF BULK BURIED HETEROSTRUCTURE AND MULTIPLE QUANTUM-WELL LASER-AMPLIFIER SWITCHES

被引：3

作者：

CAVANAGH, BP

MARSHALL, IW

SHERLOCK, G

WICKES, H

机构：

[1] British Telecommunications Research Laboratories, Martlesham Heath

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

OPTICAL SWITCHING; LASERS AND LASER APPLICATIONS;

D O I：

10.1049/el:19910169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiple quantum well (MQW) and bulk laser amplifier switches are directly compared by analysis of the switching speed and the wavelength dependence of contrast (extinction ratio) and noise. The MQW device is found to be three times faster, with 20 dB less contrast and 12.5 dB less loss at optimum wavelength. It is thus shown that MQW devices are more suitable for use as fast switches.

引用

页码：263 / 265

页数：3

共 11 条

[1]

COOPER DM, 1989, ECOC P

[2]

EISENSTEIN G, 1990, APPL PHYS LETT, V57

[3] SWITCHING CHARACTERISTICS OF LASER DIODE SWITCH [J].