MULTISTABILITY OF THE CURRENT-VOLTAGE CHARACTERISTICS IN DOPED GAAS-ALAS SUPERLATTICES

被引：106

作者：

KASTRUP, J ^{[1
]}

GRAHN, HT ^{[1
]}

PLOOG, K ^{[1
]}

PRENGEL, F ^{[1
]}

WACKER, A ^{[1
]}

SCHOLL, E ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST THEORET PHYS,D-10623 BERLIN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-field domain formation in doped semiconductor superlattices leads to sharp discontinuities in the current-voltage (I-V) characteristic. The successive expansion of the high-field region with increasing bias voltage through the periodic heterostructure manifests itself in a regular sequence of stable current branches. The current shows a complex hysteretic behavior. We observe two, three, and more stable current levels for fixed bias voltages. Calculations of the I-V characteristic based on a microscopic model support the experimentally observed multistability. (C) 1994 American Institute of Physics.

引用

页码：1808 / 1810

页数：3

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