CONDUCTANCE OF NIOBIUM OXIDE TUNNEL BARRIERS

被引：17

作者：

WALMSLEY, DG ^{[1
]}

WOLF, EL ^{[1
]}

OSMUN, JW ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS,AMES,IA 50011

来源：

THIN SOLID FILMS | 1979年 / 62卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90382-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conductance of plasma-grown oxide barriers on niobium films was measured in NbIPb tunnel junctions at 4.2 K and model parameters for the barriers were deduced. Prolonged oxidation leads to greater barrier heights. Oxygen vacancies in the barrier are invoked to explain barrier asymmetry. © 1979.

引用

页码：61 / 66

页数：6

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