ROLE OF SHALLOW TRAPS ON THE MOBILITY OF ELECTRONS IN LIQUID AR, KR, AND XE

被引：15

作者：

ASCARELLI, G

机构：

[1] Department of Physics, Purdue University, West Lafayette

来源：

JOURNAL OF CHEMICAL PHYSICS | 1979年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.438273

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that the saturation of the drift mobility observed in liquid Ar, Kr, Xe and other insulating liquids is not a hot electron effect but can instead be understood as an effect due to shallow traps. Estimates of the binding energy (B.E.) of such traps in Ar indicate a value ∼90 meV. The effect of the addition of impurities can be understood as enhancing a Schottky ionization process. © 1979 American Institute of Physics.

引用

页码：5030 / 5033

页数：4

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