METAL-SEMICONDUCTOR BARRIER STUDIES OF PBTE

[1] BAARS J, 1976, 6TH EUR SOL STAT DEV, P44

[2] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 633 - 635

[3] EFFECT OF MINORITY-CARRIER INJECTION ON SCHOTTKY-BARRIER HEIGHTS THAT APPROACH SEMICONDUCTOR BAND-GAP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 876 - 883

[4] PBTE AND PB0.8SN0.2TE EPITAXIAL-FILMS ON CLEAVED BAF2 SUBSTRATES PREPARED BY A MODIFIED HOT-WALL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3167 - 3171

[5] PHOTOEMISSION INVESTIGATION OF BAND STRUCTURE OF PBTE [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A565 - &

[6] Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990

[1] BAARS J, 1976, 6TH EUR SOL STAT DEV, P44

[2] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 633 - 635

[3] EFFECT OF MINORITY-CARRIER INJECTION ON SCHOTTKY-BARRIER HEIGHTS THAT APPROACH SEMICONDUCTOR BAND-GAP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 876 - 883

[4] PBTE AND PB0.8SN0.2TE EPITAXIAL-FILMS ON CLEAVED BAF2 SUBSTRATES PREPARED BY A MODIFIED HOT-WALL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3167 - 3171

[5] PHOTOEMISSION INVESTIGATION OF BAND STRUCTURE OF PBTE [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A565 - &

[6] Walpole J. N., 1971, Journal of Applied Physics, V42, P5609, DOI 10.1063/1.1659990