ION-BEAM-ASSISTED SPUTTER-DEPOSITION OF THIN OXIDE-FILMS

Experimental results of sputter deposition of thin oxide films of titanium and aluminium are presented and the effects of simultaneous irradiation of thin films by an oxygen ion beam during growth are discussed. The films are deposited on various substrates such as Ti, Si, SUS and quartz using an argon ion beam for sputtering and an oxygen ion beam for producing the mixing effect and control of the stoichiometry of the oxides. The deposition rate was about 0.07 nm s(-1) and the oxygen beam currents were a few tens of microamperes per square centimetre. Stable oxide films are produced. Measurement results related to the micromorphology of the interface, film composition and adhesion are presented. Experimental results suggest that the ion mixing effect in the process of ion-beam-assisted sputter deposition strongly influences the adhesion and stoichiometry of the films.