INVERSE SPIN-VALVE-TYPE MAGNETORESISTANCE IN SPIN ENGINEERED MULTILAYERED STRUCTURES

被引:112
作者
GEORGE, JM
PEREIRA, LG
BARTHELEMY, A
PETROFF, F
STEREN, L
DUVAIL, JL
FERT, A
LOLOEE, R
HOLODY, P
SCHROEDER, PA
机构
[1] MICHIGAN STATE UNIV,CTR FUNDAMENTAL MAT RES,E LANSING,MI 48824
[2] MICHIGAN STATE UNIV,DEPT PHYS & ASTRON,E LANSING,MI 48824
关键词
D O I
10.1103/PhysRevLett.72.408
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The resistivity of magnetic multilayers is generally smaller when the magnetizations of successive layers are parallel, which is the so-called giant magnetoresistanceor spin-valve effect. We have been able to reverse this effect and to obtain a smaller resistivity for an antiparallel arrangement by intercalating thin Cr layers within half of the Fe layers in Fe/Cu multilayers. This inverse spin-valve effect is due to the inverse spin asymmetries of the electron scattering in successive Fe layers with and without Cr. This is a confirmation of the fundamental mechanism of the giant magnetoresistance.
引用
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页码:408 / 411
页数:4
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