NOVEL LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-300-DEGREES-C) ANNEALING OF AMORPHOUS SI BY SCANNED HIGH-ENERGY (APPROXIMATELY 2.5 MEV) HEAVY-ION BEAM

被引：9

作者：

NAKATA, J

KAJIYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：211 / 216

页数：6

共 9 条

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