SPACE CHARGE LIMITED CURRENTS IN BATIO3 SINGLE CRYSTALS

被引:18
作者
BENGUIGU.L
机构
[1] L'electronique Appliquee, 98 rue Maurice Arnoux -
关键词
D O I
10.1016/0038-1098(69)90186-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured the hole drift mobility in BaTiO3 parallel to the c axis between 25°C and 140°C by transient SCLC. μ ≅ 2-3.10-2 cm2/V sec at room temperature and increases with T up to 0.15 cm2/V sec at 130°C. Just above the Curie point (132°C) μ = 2.10-2cm2/V sec. By steady state SCLC we show the presence of a hole trap (density 3.1018/cm3) located at 0.35 eV above the valence band. © 1969.
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页码:1245 / &
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