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THEORETICAL-STUDY ON THE ELECTRONIC-STRUCTURE OF SI-GE COPOLYMERS
被引:49
作者:
TAKEDA, K
SHIRAISHI, K
MATSUMOTO, N
机构:
[1] Contribution from the Basic Research Laboratories, NTT, Tokyo, 180, Musashino-shi
关键词:
D O I:
10.1021/ja00169a007
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The electronic structures of polysilane, polygermane, and their copolymers have been calculated by the first principle local density functional method. Polysilane and polygermane with trans-planar skeleton have direct band gaps of 3.89 and 3.31 eV, respectively. This direct-type band structure is conserved independently of the skeleton forms and the copolymerization. The ordered regular and/or block Si-Ge copolymerization introduces the zone-folding image in the copolymer band structures. SimGen ordered copolymers have the potential to be the ID superlattice high polymers. For Si-Ge copolymers having over five blocks, the band-edge electronic structure can be approximately estimated by using the effective mass theory, and a picture of a 1D-QW wire model can be imaged. Typical characteristics in the superlattice, the energy gaps, and optical transition profiles are theoretically discussed. © 1990, American Chemical Society. All rights reserved.
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页码:5043 / 5052
页数:10
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