TRANSFER-MATRIX FORMULATION OF SPONTANEOUS EMISSION NOISE OF DFB SEMICONDUCTOR-LASERS

A unified formulation of the spontaneous emission noise in semiconductor DFB lasers is presented by using a transfer-matrix approach. Analytical expressions for the noise power per unit frequency bandwidth below threshold and the spontaneous emission rate into the lasing mode are obtained based on the Green's function method. Three DFB laser structures are analyzed: 1) a standard DFB structure with facet reflectivities, 2) a multisection DFB structure composed of n sections, which models a phase-shifted DFB laser and a multielectrode (tunable) DFB laser, and 3) a periodic layered DFB structure which models a surface-emitting DFB laser. It is shown that the spontaneous emission noise of a complicated DFB laser structure can be calculated easily by the transfer matrix of each section of the structure and its derivative to frequency.