COMPUTER-AIDED PROXIMITY CORRECTION FOR DIRECT WRITE E-BEAM LITHOGRAPHY

被引:3
作者
KNAPEK, E
KALUS, CK
MADORE, M
HINTERMAIER, M
HOFMANN, U
SCHERERWINNER, H
SCHLAGER, R
机构
[1] Siemens AG, Corporate Research and Development Otto-Hahn-Ring 6
关键词
D O I
10.1016/0167-9317(91)90072-L
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
First results of an evolutionary software project are presented. It aims at improving high resolution of many different e-beam writers and will be available on workstations. Selecting critical structure details and preserving hierarchy are key issues to cut down computer time. An "ASIC" and an optical grid were written with CAPROX. Critical dimensions are in good agreement with nominal values as opposed to uncorrected patterns.
引用
收藏
页码:181 / 184
页数:4
相关论文
共 2 条
[1]  
Wind, Rosenfield, Pepper, Molzen, Gerber, Proximity correction for electron beam lithography using a three-Gaussian model of the electron energy distribution, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7, 6, (1989)
[2]  
Kratschmer, J. Vac. Sci. Tech, 19, 4, (1981)