USE OF CHANNELING TECHNIQUE AND THEORY OF FLUX PEAKING EFFECT TO DETERMINE LOCATION OF B IN SI

被引：3

作者：

BELOSHITSKY, VV ^{[1
]}

DIKII, NP ^{[1
]}

KUMAKHOV, MA ^{[1
]}

MATYASH, PP ^{[1
]}

SKAKUN, NA ^{[1
]}

机构：

[1] MOSCOW STATE UNIV,NUCL PHYS INST,MOSCOW 117234,USSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 25卷 / 03期

关键词：

D O I：

10.1080/00337577508235386

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：167 / 173

页数：7

共 15 条

[1]

Alexander R. B., 1970, European conference on ion implantation, P181

[2]

ALEXANDER RB, 1973, AERER7469

[3]

ALEXANDER RB, 1972, RADIAT EFF, V12, P211

[4]

Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[5]

Beloshitsky V. V., 1973, Radiation Effects, V20, P95, DOI 10.1080/00337577308232272

[6]

BELOSHITSKY VV, 1972, RADIAT EFF, V13, P9

[7]

BELOSHITSKY VV, 1974, 5 P ALL UN C INT CHA, P29

[8]

BONDERUP E, 1972, RADIAT EFF, V12, P261

[9]

BONDERUP E, 1974, 5 P ALL UN C INT CHA, P29

[10]

Kumakhov M. A., 1972, RADIAT EFF, V15, P85