TRANSITION PROBABILITY FOR PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS

被引：8

作者：

HUNTINGTON, HB

APKER, L

机构：

来源：

PHYSICAL REVIEW | 1953年 / 89卷 / 02期

关键词：

D O I：

10.1103/PhysRev.89.352

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：352 / 356

页数：5

共 15 条

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APKER, L ;

TAFT, E ;

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TAFT, E ;

DICKEY, J .

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[5] Note on the external photoelectric effect of semi-conductors [J].

Condon, EU .

PHYSICAL REVIEW, 1938, 54 (12) :1089-1091

[6]

HERRING C, 1949, REVS MODERN PHYS, V21, P245

[7]

HUNTINGTON HB, 1952, PHYS REV, V89, P357

[8] THE SURFACE PHOTOELECTRIC EFFECT [J].

MAKINSON, REB .

PHYSICAL REVIEW, 1949, 75 (12) :1908-1911

[9] Metallic reflexion and the surface photoelectric effect [J].

Makinson, REB .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1937, 162 (A910) :0367-0390

[10] The optical constants of crystals of selenium and tellurium for wave-lengths from 3000 to 5000 Angstroms [J].

Miller, RF .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1925, 10 (06) :621-634

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