CHARACTERIZATION OF BURST NOISE IN SILICON DEVICES

Burst noise has been investigated in forward-biased silicon diodes and transistors. To separate surface effects from bulk effects, measurements were performed on gate-controlled devices. Both gate-voltage-dependent and gate-voltage-independent burst noise were observed. Burst noise under forward bias conditions has been characterized in terms of the bias across the p-n junction. From this characterization simple equivalent circuits are presented for diodes and bipolar transistors which model the main features of burst noise in these devices. Analytical expressions for the burst noise spectral distributions are developed and compared with experiment. © 1969.