ELECTRICAL CROSS-TALK IN 2-PORT RESONATORS - THE RESONANT SILICON BEAM FORCE SENSOR

被引:23
作者
VANMULLEM, CJ
TILMANS, HAC
MOUTHAAN, AJ
FLUITMAN, JHJ
机构
[1] MESA Research Institute, University of Twente, 7500 AE Enschede
关键词
D O I
10.1016/0924-4247(92)80099-O
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An important design consideration in the development of two-port resonant sensors is the electrical cross-talk between the input port and the output port. The overall transfer function HBAR(j-omega) of the two-port sensor is equal to the vectorial sum of a transfer function representing the mechanical behavior and a transfer function representing the electrical cross-talk. The resonant silicon beam force sensor with a piezoelectric driver and a piezoelectric detector is analyzed. Two solutions to reduce the level of cross-talk are presented. Proper adjustment of the value of relevant components in the sensor geometry and/or electrical interruption of the bottom electrode result in a cross-talk level close to the noise level for the frequency range of interest.
引用
收藏
页码:168 / 173
页数:6
相关论文
共 8 条
[1]   RF PLANAR MAGNETRON SPUTTERED ZNO FILMS .2. ELECTRICAL-PROPERTIES [J].
BLOM, FR ;
VANDEPOL, FCM ;
BAUHUIS, G ;
POPMA, TJA .
THIN SOLID FILMS, 1991, 204 (02) :365-376
[2]  
BLOM FR, 1990, SENSOR ACTUAT A-PHYS, V23, P226
[3]  
ELWENSPOEK M, 1989, 1989 IEEE MICR EL ME, P126
[4]   RESONANT-MICROBRIDGE VAPOR SENSOR [J].
HOWE, RT ;
MULLER, RS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :499-506
[5]   SENSORS WITH DIGITAL OR FREQUENCY OUTPUT [J].
MIDDELHOEK, S ;
FRENCH, PJ ;
HUIJSING, JH ;
LIAN, WJ .
SENSORS AND ACTUATORS, 1988, 15 (02) :119-133
[6]  
TILMANS HAC, 1991, 6TH P INT C SOL STAT, P533
[7]  
VANMULLEM CJ, 1991, SENSOR ACTUAT A-PHYS, V25, P379
[8]  
VANVLERKEN JJL, IN PRESS INT J MODEL, V12