CORRELATED USE OF CHARACTERIZATION TECHNIQUES TO OPTIMIZE THE MG IMPLANTATION ANNEALING FOR SELF-ALIGNED HBTS

被引：1

作者：

AMARGER, V

DUBONCHEVALLIER, C

PAPADOPOULO, AC

DESCOUTS, B

GAO, Y

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90218-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The annealing process of Mg-implanted GaAs/GaAlAs HBT's has been optimized using different analysis techniques. The Mg activation was deduced from a comparison between the atomic profile determined by SIMS and the electrical profile determined by electrochemical C-V profiling. Under the optimum annealing conditions, a record activation value of 87% was reached. Cathodoluminescence analysis has also been used to assess the quality of the implanted materials.

引用

页码：462 / 465

页数：4