SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M

被引：187

作者：

MUKAI, K

OHTSUKA, N

SUGAWARA, M

YAMAZAKI, S

机构：

[1] Fujitsu Laboratories Ltd, Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期

关键词：

QUANTUM DOTS; 1.3-MU-M EMISSION; DIAMAGNETIC SHIFTS; ALE; INGAAS;

D O I：

10.1143/JJAP.33.L1710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew 1.3-mu m emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots. Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.

引用

收藏

页码：L1710 / L1712

页数：3

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