CHARACTERIZATION OF INCOMPLETE ACTIVATION OF HIGH-DOSE BORON IMPLANTS IN SILICON

被引：38

作者：

SCHWETTM.FN ^{[1
]}

机构：

[1] TEXAS INSTR INC, DALLAS, TX 75222 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1918 / 1920

页数：3

共 18 条

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[7]

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[9]

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[10] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J].

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