MOVPE REGROWTH OF SEMIINSULATING INP AROUND REACTIVE ION ETCHED LASER MESAS

被引：10

作者：

NORDELL, N

BORGLIND, J

KJEBON, O

LOURDUDOSS, S

机构：

[1] Swedish Institute of Microelectronics, Kista, PO Box 1084

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high temperature and low pressure. The resulting 3 dB modulation bandwidth of the buried heterostructure laser was 7.9 GHz at 10.5 mW.

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页码：926 / 927

页数：2

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