ANALYSIS OF TEMPERATURE-DEPENDENT HALL CONDUCTIVITY IN SILICON INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS BY A MOBILITY EDGE MODEL

被引：11

作者：

KAWAJI, S

WAKABAYASHI, JI

MORIYAMA, J

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1981年 / 50卷 / 12期

关键词：

D O I：

10.1143/JPSJ.50.3839

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3839 / 3840

页数：2

共 12 条

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CAGE ME, 1981, UNPUB 2ND P INT C PR

[7] TWO-DIMENSIONAL LEVEL BROADENING IN THE EXTREME QUANTUM LIMIT [J].

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[8]

Kawaji S., 1980, PHYSICS HIGH MAGNETI, P284

[9]

LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632

[10] QUANTIZED HALL RESISTANCE AND THE MEASUREMENT OF THE FINE-STRUCTURE CONSTANT [J].

PRANGE, RE .

PHYSICAL REVIEW B, 1981, 23 (09) :4802-4805

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