GAAS-GAALAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER-DIODES SELECTIVELY GROWN BY MOLECULAR-BEAM EPITAXY ON SIO2-MASKED SUBSTRATES

被引：10

作者：

HONG, JM ^{[1
]}

WU, MC ^{[1
]}

WANG, S ^{[1
]}

WANG, WI ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：886 / 888

页数：3

共 10 条

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