BEHAVIOR OF IN-PLANE G-TENSOR IN LOW-SYMMETRY D1 AND D9 SYSTEMS WITH APPLICATION TO COPPER AND VANADYL CHELATES

被引:74
作者
HITCHMAN, MA
OLSON, CD
BELFORD, RL
机构
[1] Noyes Chemical Laboratory, Materials Research Laboratory, University of Illinois, Urbana
关键词
D O I
10.1063/1.1671177
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A general expression is developed for the orientations and magnitudes of the principal in-plane g values of low-symmetry d1 and d9 complexes considered as highly perturbed axial systems. The low-symmetry components of the ligand field cause participation of |3z2-r 3〉 in the ground state and reorientation of the |xz〉,| yz〉 orbital set. The way in which these effects show up in the in-plane g ellipse is investigated for a number of possible bonding situations. A critical evaluation is made of the information which can be (and that which cannot be) obtained from the in-plane g values, and the observed g parameters from electron paramagnetic resonance of several copper and vanadyl chelates of Schiff's bases and ketoenolates are discussed in terms of the theory.
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页码:1195 / &
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