PHOTOELECTRON EMISSION AND PHOTOLUMINESCENCE FROM SIO2-SI SAMPLES

被引：4

作者：

PRAULINSH, AM ^{[1
]}

GOLDBERG, M ^{[1
]}

TRUKHIN, AN ^{[1
]}

FITTING, HJ ^{[1
]}

机构：

[1] UNIV ROSTOCK,FACHBEREICH PHYS,O-2500 ROSTOCK,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 133卷 / 02期

关键词：

D O I：

10.1002/pssa.2211330222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacuum photoelectron emission (PEE), photoluminescence (PL), and cathodoluminescence (CL) from SiO2-Si samples are investigated in order to find interconnections between these three methods for the characterization of the energy band scheme and the term structure. PEE quantum yield as well as PE energy distributions show in a characteristic manner the excitation of PE from the Si substrate with the overall initial threshold hv(th) almost-equal-to 5.7 eV. Then a continuous transition to PEE from SiO2 is observed due to interface states near the Si substrate correlated with oxygen difficient twofold coordinated silicon complexes. This emission model is consistent with the PL excitation spectrum showing subbands below the fundamental absorption edge in SiO2.

引用

页码：385 / 394

页数：10

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