ELECTRON HALL-MOBILITY OF N-GAN

被引：89

作者：

RODE, DL ^{[1
]}

GASKILL, DK ^{[1
]}

机构：

[1] USN,RES LAB,ADV MAT SYNTH LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is known that recently published electron Hall mobility data by J. G. Kim, A. C. Frenkel, H. Liu, and R. M. Park [Appl. Phys. Lett. 65, 91 (1994)] for cubic GaN at 300 K are in excellent agreement with theoretical calculations of Hall mobility for uncompensated material. The Hall scattering factor is calculated and Hall effect free-electron concentration data are corrected for samples with free-electron concentrations of 7.24×1017cm-3 and 1.74×1018cm-3. The corresponding experimental/theoretical Hall mobility is 760/744 and 530/543. Hence, agreement between theory and experiment is demonstrated within 2.5%.© 1995 American Institute of Physics.

引用

页码：1972 / 1973

页数：2

共 6 条

[1]

Rode D.L., Phys. Status Solidi B, 55, (1973)

[2]

Rode D.L., Ilegems M., Montgomery H.C., J. Phys. Chem. Solids, 34, (1973)

[3]

Gaskill D.K., Doverspike K., Rowland L., Rode D.L., 21st International Symposium on Compound Semiconductors, (1994)

[4]

Kim J.G., Frenkel A.C., Liu H., Park R.M., Appl. Phys. Lett., 65, (1994)

[5]

Rode D.L., Semiconductors and Semimetals, 10, pp. 1-90, (1975)

[6]

Chin V.W.L., Tansley T.L., Osotchan T., These material parameters are identical to those given in Ref. 5. We note the amazing coincidence between the polaron effective mass given in Ref. 5 (0.218m0) and the effective mass recently estimated as 0.22m0, J. Appl. Phys., 75, (1994)

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