COMPLEMENTARY TRANSISTORS IN INTEGRATED CIRCUITS

被引：4

作者：

DONALD, RG

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(70)90068-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：815 / &

共 13 条

[1]

ALLEN RJ, 1967, COMPLEMENTARY PNPNPN

[2]

Boltaks B.I., 1963, DIFFUSION SEMICONDUC

[3]

BUSEN KM, 1967, MAY ECS M DALL

[4] A COMPLEMENTARY INTEGRATED CIRCUIT STRUCTURE [J].

DONALD, RG .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1488-&

[5]

DONOVAN RP, 1963, OCT M EL SOC

[6]

HAUSER JR, 1966, TDR63316 RES TRIANGL, V11

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[8]

LIN HC, 1964, P IEEE, V49, P1491

[9]

MCLOUSKI RM, CR524 WEST DEF SPAC

[10]

Runyan W.R., 1965, SILICON SEMICONDUCTO