SELF-SUSTAINED PULSATIONS AND NEGATIVE-RESISTANCE BEHAVIOR IN INGAASP (LAMBDA=1.3-MU-M) DOUBLE-HETEROSTRUCTURE LASERS

被引：18

作者：

NELSON, RJ

DUTTA, NK

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.92082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：769 / 771

页数：3

共 13 条

[1]

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LOGAN, RA ;

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[3] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[4] INTENSITY PULSATION ENHANCEMENT BY SELF-FOCUSING IN SEMICONDUCTOR INJECTION-LASERS [J].

LANG, R .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L93-L96

[5]

NAKAMURA M, 1980, TOPICAL M INTEGRATED

[6] HIGH-OUTPUT POWER INGAASP (LAMBDA=1.3-MU-M) STRIP-BURIED HETEROSTRUCTURE LASERS [J].

NELSON, RJ ;

WRIGHT, PD ;

BARNES, PA ;

BROWN, RL ;

CELLA, T ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :358-360

[7]

NELSON RR, UNPUBLISHED

[8] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE [J].

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) :1273-1274

[9] SATURABLE ABSORPTION EFFECTS IN THE SELF-PULSING (ALGA)AS JUNCTION LASER [J].

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :652-655

[10] STATISTICAL CHARACTERIZATION OF THE SELF-INDUCED INTENSITY MODULATION EXHIBITED BY ALGAAS JUNCTION LASERS WITH PROTON STRIPES [J].

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :438-440

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