MICROHARDNESS ANISOTROPY OF SILICON-CARBIDE

被引：54

作者：

SAWYER, GR ^{[1
]}

SARGENT, PM ^{[1
]}

PAGE, TF ^{[1
]}

机构：

[1] DEPT MET & MAT SCI,CAMBRIDGE,ENGLAND

来源：

关键词：

D O I：

10.1007/BF00552114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1001 / 1013

页数：13

共 50 条

[1] ANISOTROPIC BEHAVIOR OF ETCHED HARDNESS INDENTATIONS
ADEWOYE, OO
PAGE, TF
[J]. JOURNAL OF MATERIALS SCIENCE, 1976, 11 (05) : 981 - 984
[2] ADEWOYE OO, 1976, THESIS U CAMBRIDGE
[3] Air Force Cambridge Research Laboratories (U.S.)
[4] University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973
[5] LATTICE MISORIENTATION AND DISPLACED VOLUME FOR MICROHARDNESS INDENTATIONS IN MGO CRYSTALS
ARMSTRONG, RW
WU, CC
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (3-4) : 102 - 106
[6] ARMSTRONG RW, 1973, SCI HARDNESS TESTING, P175
[7] INVESTIGATION OF MICROHARDNESS ANISOTROPY IN COBALT SINGLE-CRYSTALS
ARNELL, RD
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (09) : 1225 - 1232
[8] Boyarskaya Yu. S., 1973, Kristall und Technik, V8, P1367, DOI 10.1002/crat.19730081205
[9] ANISOTROPY IN HARDNESS OF SINGLE CRYSTALS
BROOKES, CA
ONEILL, JB
REDFERN, BAW
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 322 (1548): : 73 - &
[10] ANISOTROPY AND INDENTATION CREEP IN CRYSTALS WITH ROCKSALT STRUCTURE
BROOKES, CA
BURNAND, RP
MORGAN, JE
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (12) : 2171 - 2173