DISLOCATION INTERACTION WITH IRRADIATION DAMAGE IN HIGH-VOLTAGE ELECTRON-MICROSCOPE

被引：10

作者：

STOBBS, WM ^{[1
]}

机构：

[1] CAVENDISH LAB,CAMBRIDGE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE | 1973年 / 27卷 / 01期

关键词：

D O I：

10.1080/14786437308228928

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 263

页数：7

共 6 条

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EYRE, BL ;

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[2] KINETICS OF MIGRATION OF POINT DEFECTS TO DISLOCATIONS [J].

BULLOUGH, R ;

NEWMAN, RC .

[3] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].

COCKAYNE, DJ ;

RAY, ILF ;

WHELAN, MJ .

PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&

MAKIN, MJ .

PHILOSOPHICAL MAGAZINE, 1968, 18 (153) :637-&

[5]

MAKIN MJ, 1968, 6 INT C EL MICR GREN, V2, P213

STOBBS, WM ;

SWORN, CH .

PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1365-&