CHARACTERIZATION OF AN INGAASP SEMICONDUCTOR-LASER AMPLIFIER AS A MULTIFUNCTIONAL DEVICE

被引：12

作者：

BERTILSSON, K

RORGREN, R

ANDREKSON, PA

ENG, ST

机构：

[1] Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1993年 / 11卷 / 07期

关键词：

D O I：

10.1109/50.238074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multi-functional properties of an InGaAsP semiconductor laser amplifier have been evaluated. A bit error rate of 10(-9) at 100 Mb/s was obtained using the amplifier as a detector at a received optical power of -27 dBm with simultaneous cavity gain of 16 dB. The bandwidth of the amplifier detector was 300 MHz and the maximum responsivity was 30 V/W. The amplifier had a maximum gain of 29 dB and a very large optical on/off ratio of 50 dB. When the amplifier was used as a switch the cavity gain was 19 dB and the extinction ratio was 22 dB.

引用

页码：1147 / 1150

页数：4

共 14 条

[1] 100 MBIT/S LASER DIODE TERMINAL WITH OPTICAL GAIN FOR FIBRE-OPTIC LOCAL AREA NETWORKS [J].