9.5-14.5GHZ GAAS HBT 1W MMIC WITH 55-PERCENT PEAK POWER ADDED EFFICIENCY

被引：1

作者：

ALI, F

GUPTA, A

SALIB, M

机构：

[1] Westinghouse Electric Corporation, Advanced Technology Labs., MS-3K11 Baltimore, Maryland 21203

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 03期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

D O I：

10.1049/el:19940172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully matched, broadband, high efficiency MMIC power amplifier using AlGaAs/GaAs HBTs has been designed and tested. At 7V collector bias, this HBT amplifier produced 31 dBm CW peak output power with 9dB gain and 55% peak power-added efficiency in the 9.5-14.5GHz band. To the authors' knowledge, this is the highest efficiency ever achieved from a broadband MMIC power amplifier.

引用

页码：245 / 246

页数：2

共 8 条

[1]

Ali F., 1993, IEEE Microwave and Guided Wave Letters, V3, P271, DOI 10.1109/75.242218

[2]

ALI F, 1991, HEMTS HBTS DEVICES F, pCH5

[3]

ALI F, 1993, OCT IEEE GAAS IC S, P363

[4]

Bayraktaroglu B., 1990, IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers. (Cat. No.90CH2869-6), P43, DOI 10.1109/MCS.1990.110935

[5]

GUPTA A, 1993, MAR P IEEE PRINC SEC

[6]

RAMACHANDRAN R, 1990, OCT IEEE GAAS IC S, P357

[7]

SALIB M, 1993, IEEE MICROW GUIDED W, V3, P447

[8]

WANG NL, 1992, OCT IEEE GAAS IC S, P301

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